mar. 2003 mitsubishi hvigbt modules cm800ha-66h high power switching use insulated type i c ................................................................... 800a v ces ....................................................... 3300v insulated type 1-element in a pack application inverters, converters, dc choppers, induction heating, dc to dc converters. cm800ha-66h hvigbt modules (high voltage insulated gate bipolar transistor modules) outline drawing & circuit diagram dimensions in mm 3 - m4 nuts 4 - m8 nuts c e cm e c c 20 40 124 0.25 140 114 57 0.25 57 0.25 130 5 38 18 61.5 5.2 40 15 30 28 48.8 10.65 10.35 6 - 7 mounting holes g e e g c ec circuit diagram label hvigbt (high voltage insulated gate bipolar transistor) modules
mar. 2003 mitsubishi hvigbt modules cm800ha-66h high power switching use insulated type hvigbt modules (high voltage insulated gate bipolar transistor modules) maximum ratings (tj = 25 c) collector-emitter voltage gate-emitter voltage maximum collector dissipation junction temperature storage temperature isolation voltage mounting torque mass v ge = 0v v ce = 0v dc, t c = 60 c pulse (note 1) pulse (note 1) t c = 25 c, igbt part charged part to base plate, rms, sinusoidal, ac 60hz 1min. main terminals screw m8 mounting screw m6 auxiliary terminals screw m4 typical value collector current emitter current 3300 20 800 1600 800 1600 6900 ?0 ~ +150 ?0 ~ +125 6000 6.67 ~ 13.00 2.84 ~ 6.00 0.88 ~ 2.00 1.5 symbol item conditions unit ratings v v a a a a w c c v n? n? n? kg v ces v ges i c i cm i e (note 2) i em (note 2) p c (note 3) t j t stg v iso v v v ce = v ces , v ge = 0v v ge = v ges , v ce = 0v t j = 25 c t j = 125 c v cc = 1650v, i c = 800a, v ge = 15v v cc = 1650v, i c = 800a v ge1 = v ge2 = 15v r g = 3.75 ? resistive load switching operation i e = 800a, v ge = 0v i e = 800a die / dt = ?600a / s junction to case, igbt part junction to case, fwdi part case to fin, conductive grease applied i c = 80ma, v ce = 10v i c = 800a, v ge = 15v (note 4) v ce = 10v v ge = 0v collector cutoff current gate-emitter threshold voltage gate-leakage current collector-emitter saturation voltage input capacitance output capacitance reverse transfer capacitance total gate charge turn-on delay time turn-on rise time turn-off delay time turn-off fall time emitter-collector voltage reverse recovery time reverse recovery charge contact thermal resistance min typ max 10 0.5 5.72 1.60 2.00 2.50 1.00 4.29 1.20 0.018 0.036 ma a nf nf nf c s s s s v s c k/w k/w k/w 4.40 4.80 80 8.0 2.4 3.8 3.30 200 0.008 i ces i ges c ies c oes c res q g t d (on) t r t d (off) t f v ec (note 2) t rr (note 2) q rr (note 2) r th(j-c)q r th(j-c)r r th(c-f) symbol item conditions v ge(th) v ce(sat) limits unit 6.0 4.5 note 1. pulse width and repetition rate should be such that the device junction temp. (t j ) does not exceed t jmax rating. 2. i e , v ec , t rr , q rr & die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode. 3. junction temperature (t j ) should not increase beyond 150 c. 4. pulse width and repetition rate should be such as to cause negligible temperature rise. 7.5 thermal resistance electrical characteristics (tj = 25 c) hvigbt (high voltage insulated gate bipolar transistor) modules
mar. 2003 mitsubishi hvigbt modules cm800ha-66h high power switching use insulated type hvigbt (high voltage insulated gate bipolar transistor) modules performance curves 1600 800 400 0 10 0 2468 1200 t j =25 c v ge =13v v ge =12v v ge =11v v ge =10v v ge =9v v ge =8v v ge =7v v ge =14v v ge =15v v ge =20v 0 8 6 4 2 0 400 800 1200 1600 v ge =15v t j = 25 c t j = 125 c 1600 800 400 0 1200 20 0481216 v ce =10v t j = 25 c t j = 125 c 020 16 12 8 4 10 8 6 4 2 0 t j = 25 c i c = 1600a i c = 800a i c = 320a 10 1 23 10 1 5710 0 23 5710 1 23 5710 2 10 3 7 5 3 2 10 2 7 5 3 2 7 5 3 2 10 0 c ies c oes c res v ge = 0v, t j = 25 c c ies, c oes : f = 100khz c res : f = 1mhz capacitance characteristics ( typical ) capacitance c ies , c oes , c res ( nf ) collector-emitter voltage v ce ( v ) output characteristics ( typical ) collector current i c ( a ) transfer characteristics ( typical ) collector current i c ( a ) gate-emitter voltage v ge ( v ) collector-emitter saturation voltage v ce(sat) ( v ) collector current i c ( a ) collector-emitter saturation voltage characteristics ( typical ) collector-emitter voltage v ce ( v ) collector-emitter saturation voltage v ce(sat) ( v ) gate-emitter voltage v ge ( v ) collector-emitter saturation voltage characteristics ( typical ) free-wheel diode forward characteristics ( typical ) emitter-collector voltage v ec ( v ) emitter current i e ( a ) 0 1600 1200 800 400 8 6 4 2 0 t j = 25 c t j = 125 c
mar. 2003 mitsubishi hvigbt modules cm800ha-66h high power switching use insulated type hvigbt (high voltage insulated gate bipolar transistor) modules 7 5 3 2 710 2 10 1 7 23 5710 3 23 5 5 5 3 2 10 0 5 7 5 3 2 710 2 10 1 7 23 5710 3 23 5 5 5 3 2 10 0 5 t d(off) v cc = 1650v, v ge = 15v r g = 3.75 ? , t j = 125 c inductive load t d(on) t r t f v cc = 1650v, t j = 125 c inductive load v ge = 15v, r g = 3.75 ? t rr i rr 7 5 3 2 10 2 7 5 5 3 2 10 3 10 2 10 3 10 2 10 1 10 0 7 5 3 2 10 1 7 5 3 2 10 0 10 1 7 5 3 2 23 57 23 57 23 57 single pulse t c = 25 c r th(j c)q = 0.018k/ w r th(j c)r = 0.036k/ w 20 16 12 8 4 0 4000 5000 3000 0 1000 2000 v cc = 1650v i c = 800a half-bridge switching time characteristics ( typical ) switching times ( s ) collector current i c ( a ) reverse recovery characteristics of free-wheel diode ( typical ) reverse recovery time t rr ( s ) emitter current i e ( a ) reverse recovery current i rr ( a ) transient thermal impedance characteristics normalized transient thermal impedance z th(j c) time ( s ) gate charge characteristics ( typical ) gate-emitter voltage v ge ( v ) gate charge q g ( nc ) 0 0.5 1.0 1.5 2.0 2.5 half-bridge switching energy characteristics ( typical ) current ( a ) switching energy ( j/p ) 0 200 400 1000 800 600 v cc = 1650v, v ge = 15v, r g = 3.75 ? , tj = 125 c, inductive load e on e off e rec 10 8 6 4 2 0 0 10203040 gate resistance ( ? ) half-bridge switching energy characteristics ( typical ) switching energy ( j/p ) v cc = 1650v, i c = 800a, v ge = 15v, tj = 125 c, inductive load e on e off
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